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Goford Semiconductor G2305

Goford Semiconductor G2305

MPNG2305
Active

P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7

$0.05412Price · pay online now
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$0.05 / ea · total $0.50

5,800 in stock — maximum per order · MOQ 10 · 3–4 days lead time

$0.04 / ea from 100 pcs

PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

G2305 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C4.8A (Ta)
Power dissipation1.7W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs50mOhm @ 4.1A, 4.5V
Gate charge (Qg) (Max) @ vgs7.8 nC @ 4.5 V