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Goford Semiconductor G200P04D3

Goford Semiconductor G200P04D3

MPNG200P04D3
Active

P-40V,-20A,RD(MAX)<75M@-10V,VTH-

$0.27384Price · pay online now
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$0.27 / ea · total $1.35

5 in stock — maximum per order · MOQ 5 · 3–4 days lead time

Packaging8-PowerVDFN
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

G200P04D3 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs75mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2662 pF @ 20 V