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Goford Semiconductor G1003A

Goford Semiconductor G1003A

MPNG1003A
Active

N100V,RD(MAX)<210M@10V,RD(MAX)<2

$0.04920Price · pay online now
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$0.05 / ea · total $0.50

435 in stock — maximum per order · MOQ 10 · 3–4 days lead time

$0.05 / ea from 100 pcs

PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

G1003A specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power dissipation5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureStandard
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs210mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs18.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds622 pF @ 25 V