Goford Semiconductor G06P01E
MPNG06P01E
Active
P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4
$0.06960Price · pay online now
$0.07 / ea · total $0.70
25 in stock — maximum per order · MOQ 10 · 3–4 days lead time
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 12 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 4A (Tc) |
| Power dissipation | 1.8W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±10V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Standard |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 28mOhm @ 3A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 14 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1087 pF @ 6 V |