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Goford Semiconductor G04P10HE

Goford Semiconductor G04P10HE

MPNG04P10HE
Active

P-100V,-4A,RD(MAX)<200M@-10V,VTH

$0.26520Price · pay online now
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$0.27 / ea · total $0.54

2 in stock — maximum per order · MOQ 2 · 3–4 days lead time

$0.27 / ea from 5 pcs

PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

G04P10HE specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation1.2W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureStandard
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id2.8V @ 250µA
Rds on (Max) @ id, vgs200mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1647 pF @ 50 V