Goford Semiconductor G02P06
MPNG02P06
Active
P60V,RD(MAX)<190M@-10V,RD(MAX)<2
$0.05556Price · pay online now
$0.06 / ea · total $0.60
15 in stock — maximum per order · MOQ 10 · 3–4 days lead time
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Current - continuous drain (Id) @ 25°C | 1.6A |
| Power dissipation | 1.5W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 190mOhm @ 1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 11.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 573 pF @ 30 V |