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Goford Semiconductor G01N20LE

Goford Semiconductor G01N20LE

MPNG01N20LE
Active

N200V,RD(MAX)<850M@10V,RD(MAX)<9

$0.22116Price · pay online now
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$0.22 / ea · total $1.10

1,412 in stock — maximum per order · MOQ 5 · 3–4 days lead time

$0.18 / ea from 50 pcs

PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

G01N20LE specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C1.7A (Tc)
Power dissipation1.5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureStandard
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs700mOhm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds580 pF @ 25 V