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Goford Semiconductor 3415A

Goford Semiconductor 3415A

MPN3415A
Active

P20V,RD(MAX)<45M@-4.5V,RD(MAX)<6

$0.04128Price · pay online now
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$0.04 / ea · total $0.80

1,010 in stock — maximum per order · MOQ 20 · 3–4 days lead time

$0.03 / ea from 200 pcs

PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

3415A specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C4A (Ta)
Power dissipation1.4W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id900mV @ 250µA
Rds on (Max) @ id, vgs45mOhm @ 4A, 4.5V
Gate charge (Qg) (Max) @ vgs12 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds950 pF @ 10 V