GeneSiC Semiconductor GD60MPS06H
MPNGD60MPS06H
Active
DIODE SIL CARB 650V 82A TO247-2
$13.23Ref. price · indicative, final on quote
PackagingTO-247-2
SeriesSiC Schottky MPS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SiC Schottky MPS™ |
| Diode type | Silicon Carbide Schottky |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.8 V @ 60 A |
| Current - reverse leakage @ vr | 10 µA @ 650 V |
| Current - average rectified | 82A |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tube |
| Case | TO-247-2 |
| Capacitance @ vr, | 1.463nF @ 1V, 1MHz |
| Reverse recovery time | 0 ns |