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GeneSiC Semiconductor GD30MPS12H

GeneSiC Semiconductor GD30MPS12H

MPNGD30MPS12H
Active

DIODE SIL CARB 1.2KV 55A TO247-2

$9.88Ref. price · indicative, final on quote
PackagingTO-247-2
RoHSRoHS Compliant
SeriesSiC Schottky MPS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GD30MPS12H specifications
ParameterValue
SeriesSiC Schottky MPS™
Diode typeSilicon Carbide Schottky
MountingThrough Hole
Voltage - DC reverse (Vr)1200 V
Voltage - forward (Vf) (Max) @ if1.8 V @ 30 A
Current - reverse leakage @ vr20 µA @ 1200 V
Current - average rectified55A
Operating temperature - junction-55°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-247-2
Capacitance @ vr,1101pF @ 1V, 1MHz