GD30MPS06H
GeneSiC Semiconductor
Through HoleTubeNo Recovery Time > 500mA (Io)
Ref. price$5.91
Lead time on requestGet quote
GeneSiC Semiconductor GD30 Series
3 variants · GeneSiC Semiconductor
About the GeneSiC Semiconductor GD30 Series
The GeneSiC Semiconductor GD30 Series series groups 3 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common diode type of Silicon Carbide Schottky, operating temperature - junction of -55°C ~ 175°C and package of Tube. Variants differ by capacitance @ vr,, case and current - average rectified, so you can match the exact capacitance @ vr, your application requires using the selection guide below. All listed GeneSiC Semiconductor GD30 Series part numbers are active and orderable.
Select a variant by
- Capacitance @ vr,
- 735pF @ 1V, 1MHz · 1101pF @ 1V, 1MHz
- Case
- TO-247-2 · TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Current - average rectified
- 49A · 51A · 55A
- Mounting
- Surface Mount · Through Hole
- Speed
- Fast Recovery =< 500ns, > 200mA (Io) · No Recovery Time > 500mA (Io)
- Voltage - DC reverse (Vr)
- 650 V · 1200 V
Shared specifications
- Diode type
- Silicon Carbide Schottky
- Operating temperature - junction
- -55°C ~ 175°C
- Package
- Tube
Variant comparison
| Parameter | GD30MPS06H | GD30MPS06J | GD30MPS12H |
|---|---|---|---|
| Capacitance @ vr, | 735pF @ 1V, 1MHz | 735pF @ 1V, 1MHz | 1101pF @ 1V, 1MHz |
| Case | TO-247-2 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-247-2 |
| Current - average rectified | 49A | 51A | 55A |
| Mounting | Through Hole | Surface Mount | Through Hole |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Voltage - DC reverse (Vr) | 650 V | 650 V | 1200 V |
Request a quote on any GeneSiC Semiconductor GD30 Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.
