GeneSiC Semiconductor GD2X100MPS06N
MPNGD2X100MPS06N
Active
650V 200A SOT-227 SIC SCHOTTKY M
$47.91Ref. price · indicative, final on quote
PackagingSOT-227-4, miniBLOC
SeriesSiC Schottky MPS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SiC Schottky MPS™ |
| Diode type | Silicon Carbide Schottky |
| Mounting | Chassis Mount |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.8 V @ 100 A |
| Current - reverse leakage @ vr | 5 µA @ 650 V |
| Current - average rectified (Io) (per diode) | 108A (DC) |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tube |
| Case | SOT-227-4, miniBLOC |
| Diode configuration | 2 Independent |
| Reverse recovery time | 0 ns |