GeneSiC Semiconductor GD2X Discrete Semiconductors Series

2 variants · GeneSiC SemiconductorAll Discrete Semiconductors →

About the GeneSiC Semiconductor GD2X Discrete Semiconductors Series

The GeneSiC Semiconductor GD2X Discrete Semiconductors Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of SOT-227-4, miniBLOC, diode configuration of 2 Independent and diode type of Silicon Carbide Schottky. Variants differ by current - average rectified (Io) (per diode), current - reverse leakage @ vr and voltage - forward (Vf) (Max) @ if, so you can match the exact current - average rectified (Io) (per diode) your application requires using the selection guide below. All listed GeneSiC Semiconductor GD2X Discrete Semiconductors Series part numbers are active and orderable.

Select a variant by

Current - average rectified (Io) (per diode): 70A (DC) · 108A (DC)
Current - reverse leakage @ vr: 5 µA @ 650 V · 10 µA @ 650 V
Voltage - forward (Vf) (Max) @ if: 1.8 V @ 60 A · 1.8 V @ 100 A

Shared specifications

Case: SOT-227-4, miniBLOC
Diode configuration: 2 Independent
Diode type: Silicon Carbide Schottky
Mounting: Chassis Mount
Operating temperature - junction: -55°C ~ 175°C
Package: Tube
Reverse recovery time: 0 ns
Speed: No Recovery Time > 500mA (Io)
Voltage - DC reverse (Vr): 650 V

Variant comparison

Parameter	GD2X100MPS06N	GD2X60MPS06N
Current - average rectified (Io) (per diode)	108A (DC)	70A (DC)
Current - reverse leakage @ vr	5 µA @ 650 V	10 µA @ 650 V
Voltage - forward (Vf) (Max) @ if	1.8 V @ 100 A	1.8 V @ 60 A

Request a quote on any GeneSiC Semiconductor GD2X Discrete Semiconductors Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.