GD10MPS17H
GeneSiC Semiconductor · SiC Schottky MPS™ Series
DIODE SIL CARB 1.7KV 26A TO247-2
[IN STOCK] In Stock: 4 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | SiC Schottky MPS™ |
| Diode type | Silicon Carbide Schottky |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 1700 V |
| Voltage - forward (Vf) (Max) @ if | 1.8 V @ 10 A |
| Current - reverse leakage @ vr | 20 µA @ 1700 V |
| Current - average rectified | 26A |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tube |
| Case | TO-247-2 |
| Capacitance @ vr, | 721pF @ 1V, 1MHz |
| Reverse recovery time | 0 ns |
GD10MPS17H
[ALLOC] verified