G3R40MT12K

GeneSiC Semiconductor · G3R™ Series

SIC MOSFET N-CH 71A TO247-4

GeneSiC Semiconductor G3R40MT12K
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Technical specifications

G3R40MT12K specifications
Parameter / AttributeSpecification / Value
SeriesG3R™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)15V
Current - continuous drain (Id) @ 25°C71A (Tc)
Power dissipation333W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±15V
TechnologySiCFET (Silicon Carbide)
CaseTO-247-4
Vgs(th) (Max) @ id2.69V @ 10mA
Rds on (Max) @ id, vgs48mOhm @ 35A, 15V
Gate charge (Qg) (Max) @ vgs106 nC @ 15 V
Input capacitance (Ciss) (Max) @ vds2929 pF @ 800 V
G3R40MT12K
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