G3R30MT12K
GeneSiC Semiconductor · G3R™ Series
SIC MOSFET N-CH 90A TO247-4
[IN STOCK] In Stock: 2 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | G3R™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1200 V |
| Drive voltage (Max rds on, min rds on) | 15V |
| Current - continuous drain (Id) @ 25°C | 90A (Tc) |
| Power dissipation | 400W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±15V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-4 |
| Vgs(th) (Max) @ id | 2.69V @ 12mA |
| Rds on (Max) @ id, vgs | 36mOhm @ 50A, 15V |
| Gate charge (Qg) (Max) @ vgs | 155 nC @ 15 V |
| Input capacitance (Ciss) (Max) @ vds | 3901 pF @ 800 V |
G3R30MT12K
[ALLOC] verified