GeneSiC Semiconductor G2R1000MT17D
MPNG2R1000MT17D
Active
SIC MOSFET N-CH 4A TO247-3
$5.72Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSRoHS Compliant
SeriesG2R™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | G2R™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1700 V |
| Drive voltage (Max rds on, min rds on) | 20V |
| Current - continuous drain (Id) @ 25°C | 5A (Tc) |
| Power dissipation | 44W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | +25V, -10V |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 5.5V @ 500µA |
| Rds on (Max) @ id, vgs | 1.2Ohm @ 2A, 20V |
| Gate charge (Qg) (Max) @ vgs | 11 nC @ 20 V |
| Input capacitance (Ciss) (Max) @ vds | 111 pF @ 1000 V |