GeneSiC Semiconductor G2R1 Series

2 variants · GeneSiC Semiconductor

About the GeneSiC Semiconductor G2R1 Series

The GeneSiC Semiconductor G2R1 Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common drain to source voltage of 1700 V, drive voltage (Max rds on, min rds on) of 20V and FET type of N-Channel. Variants differ by case, current - continuous drain (Id) @ 25°C and input capacitance (Ciss) (Max) @ vds, so you can match the exact case your application requires using the selection guide below. All listed GeneSiC Semiconductor G2R1 Series part numbers are active and orderable.

Select a variant by

Case: TO-247-3 · TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Current - continuous drain (Id) @ 25°C: 3A (Tc) · 5A (Tc)
Input capacitance (Ciss) (Max) @ vds: 111 pF @ 1000 V · 139 pF @ 1000 V
Mounting: Surface Mount · Through Hole
Power dissipation: 44W (Tc) · 54W (Tc)
Technology: SiC (Silicon Carbide Junction Transistor) · SiCFET (Silicon Carbide)
Vgs: +20V, -10V · +25V, -10V
Vgs(th) (Max) @ id: 4V @ 2mA · 5.5V @ 500µA

Shared specifications

Drain to source voltage: 1700 V
Drive voltage (Max rds on, min rds on): 20V
FET type: N-Channel
Operating temperature: -55°C ~ 175°C (TJ)
Package: Tube
Rds on (Max) @ id, vgs: 1.2Ohm @ 2A, 20V

Variant comparison

Parameter	G2R1000MT17D	G2R1000MT17J
Case	TO-247-3	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Current - continuous drain (Id) @ 25°C	5A (Tc)	3A (Tc)
Input capacitance (Ciss) (Max) @ vds	111 pF @ 1000 V	139 pF @ 1000 V
Mounting	Through Hole	Surface Mount
Power dissipation	44W (Tc)	54W (Tc)
Technology	SiC (Silicon Carbide Junction Transistor)	SiCFET (Silicon Carbide)
Vgs	+25V, -10V	+20V, -10V
Vgs(th) (Max) @ id	5.5V @ 500µA	4V @ 2mA

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