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GeneSiC Semiconductor 1N1190A

GeneSiC Semiconductor 1N1190A

MPN1N1190A
Active

DIODE GEN PURP 600V 40A DO5

$10.32Ref. price · indicative, final on quote
PackagingDO-203AB, DO-5, Stud
RoHSRoHS Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N1190A specifications
ParameterValue
Diode typeStandard
MountingChassis, Stud Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 40 A
Current - reverse leakage @ vr10 µA @ 50 V
Current - average rectified40A
Operating temperature - junction-65°C ~ 190°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageBulk
CaseDO-203AB, DO-5, Stud