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Fairchild Semiconductor FQAF9P25 — Discrete Semiconductors

Fairchild Semiconductor FQAF9P25

MPNFQAF9P25
Obsolete
$1.1300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQAF9P25 specifications
ParameterValue
SeriesQFET®
FET typeP-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.1A (Tc)
Power dissipation70W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs620mOhm @ 3.55A, 10V
Gate charge (Qg) (Max) @ vgs38 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1180 pF @ 25 V