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Fairchild Semiconductor FQAF19N20L — Discrete Semiconductors

Fairchild Semiconductor FQAF19N20L

MPNFQAF19N20L
Obsolete
$1.0900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQAF19N20L specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation85W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3 Full Pack
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs140mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds2200 pF @ 25 V