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Fairchild Semiconductor FQAF16N25C — Discrete Semiconductors

Fairchild Semiconductor FQAF16N25C

MPNFQAF16N25C
Obsolete
$0.9200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQAF16N25C specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11.4A (Tc)
Power dissipation73W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs270mOhm @ 5.7A, 10V
Gate charge (Qg) (Max) @ vgs53.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1080 pF @ 25 V