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Fairchild Semiconductor FQA7N80C — Discrete Semiconductors

Fairchild Semiconductor FQA7N80C

MPNFQA7N80C
Obsolete
$1.0900Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQA7N80C specifications
ParameterValue
SeriesQFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation198W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3, SC-65-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs1.9Ohm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1680 pF @ 25 V