EPC8002 EPC eGaN FET N-Ch 65V 2A Die

MPN EPC8002

Active Spot Stock · 24-48h Dispatch 100% Original Sealed

GANFET N-CH 65V 2A DIE

In Stock: 97 pcs

Ready for Immediate Dispatch (24-48h)

MOQ: 1 pcs Tape & Reel (TR); Cut Tape (CT)

Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)

Dispatch: Shenzhen / HK

Unit Price (USD)

$6.92 / pc

Direct Purchase Ready

Volume Pricing Breaks Confirmed upon quotation

1+ pcs

$6.92

10+ pcs

$5.93

30+ pcs

$5.34

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$6.92 / ea

97 in stock — maximum per order · 3–4 days lead time

$5.93 / ea from 10 pcs

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100% Original Sealed 45x Microscope QC 30-Day Warranty · COC USD T/T & PI · DAP/DDP

[SPEC] Essential Parameters Snapshot Full Specifications (14)

Package / Case Die

Output / Current 65 V

Full Technical Specifications

14 Parameters

EPC8002 specifications
Parameter / Attribute	Specification / Value
Series	eGaN®
FET type	N-Channel
Mounting	Surface Mount
Drain to source voltage	65 V
Drive voltage (Max rds on, min rds on)	5V
Current - continuous drain (Id) @ 25°C	2A (Ta)
Operating temperature	-40°C ~ 150°C (TJ)
Package	Tape & Reel (TR); Cut Tape (CT)
Vgs	+6V, -4V
Technology	GaNFET (Gallium Nitride)
Case	Die
Vgs(th) (Max) @ id	2.5V @ 250µA
Rds on (Max) @ id, vgs	530mOhm @ 500mA, 5V
Input capacitance (Ciss) (Max) @ vds	21 pF @ 32.5 V

Series Sibling Variants

EPC eGaN® Series Models

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EPC2015C

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