EPC2110
MPNEPC2110
Active
GANFET 2N-CH 120V 3.4A DIE
$2.38Ref. price · indicative, final on quote
PackagingDie
RoHSROHS3 Compliant
SerieseGaN®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | eGaN® |
| FET type | 2 N-Channel (Dual) Common Source |
| Drain to source voltage | 120V |
| Current - continuous drain (Id) @ 25°C | 3.4A |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | GaNFET (Gallium Nitride) |
| Case | Die |
| Vgs(th) (Max) @ id | 2.5V @ 700µA |
| Rds on (Max) @ id, vgs | 60mOhm @ 4A, 5V |
| Gate charge (Qg) (Max) @ vgs | 0.8nC @ 5V |
| Input capacitance (Ciss) (Max) @ vds | 80pF @ 60V |