GANFET 3 N-CH 60V/100V 9BGA
$1.83Ref. price · indicative, final on quote
Packaging9-VFBGA
StockContact for availability
MOQ1 pcs
- 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
- Date & lot codes on quoteStated per line before you commit; label photos on request.
- MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
- PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.
Specifications
| Parameter | Value |
|---|---|
| Series | eGaN® |
| FET type | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| Mounting type | Surface Mount |
| Drain to source voltage | 60V, 100V |
| Current - continuous drain (Id) @ 25°C | 1.7A, 500mA |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | GaNFET (Gallium Nitride) |
| Case | 9-VFBGA |
| Vgs(th) (Max) @ id | 2.5V @ 100µA, 2.5V @ 20µA |
| Rds on (Max) @ id, vgs | 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V |
| Gate charge (Qg) (Max) @ vgs | 0.22nC @ 5V, 0.044nC @ 5V |
| Input capacitance (Ciss) (Max) @ vds | 22pF @ 30V, 7pF @ 30V |