GAN TRANS ASYMMETRICAL HALF BRID
$6.62Ref. price · indicative, final on quote
PackagingDie
StockContact for availability
MOQ1 pcs
- 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
- Date & lot codes on quoteStated per line before you commit; label photos on request.
- MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
- PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.
Specifications
| Parameter | Value |
|---|---|
| Series | eGaN® |
| FET type | 2 N-Channel (Half Bridge) |
| Mounting type | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 10A (Ta), 40A (Ta) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | GaNFET (Gallium Nitride) |
| Case | Die |
| Vgs(th) (Max) @ id | 2.5V @ 4mA, 2.5V @ 16mA |
| Rds on (Max) @ id, vgs | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V |
| Gate charge (Qg) (Max) @ vgs | 4.9nC @ 15V, 19nC @ 15V |
| Input capacitance (Ciss) (Max) @ vds | 475pF @ 15V, 1960pF @ 15V |