BC556BBK

Diotec Semiconductor

Diotec Semiconductor BC556BBK
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MOQ 20 · Box · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BC556BBK specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
FET typePNP
Voltage - collector emitter breakdown65 V
Current - collector (Ic)100 mA
Current - collector cutoff15nA
DC current gain (hFE) (Min) @ ic, vce200 @ 2mA, 5V
Power - max500 mW
Frequency - transition150MHz
Operating temperature-55°C~150°C(TJ)
PackageBox
CaseTO-226-3, TO-92-3 (TO-226AA)
Vce saturation (Max) @ ib, ic650mV @ 5mA, 100mA
BC556BBK
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