ZXTP2013GTA

Diodes Incorporated

TRANS PNP 100V 5A SOT223-3

Diodes Incorporated ZXTP2013GTA
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ZXTP2013GTA specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typePNP
Voltage - collector emitter breakdown100 V
Current - collector (Ic)5 A
Current - collector cutoff20nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 1A, 1V
Power - max3 W
Frequency - transition125MHz
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-261-4, TO-261AA
Vce saturation (Max) @ ib, ic340mV @ 400mA, 4A
ZXTP2013GTA
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