ZXMP6A18KTC

Diodes Incorporated

MOSFET P-CH 60V 6.8A TO252-3

Diodes Incorporated ZXMP6A18KTC
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ZXMP6A18KTC specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C6.8A (Ta)
Power dissipation2.15W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs55mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1580 pF @ 30 V
ZXMP6A18KTC
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