ZXMP3A16N8TA

Diodes Incorporated

MOSFET P-CH 30V 5.6A 8SO

Diodes Incorporated ZXMP3A16N8TA
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ZXMP3A16N8TA specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5.6A (Ta)
Power dissipation1.9W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 4.2A, 10V
Gate charge (Qg) (Max) @ vgs29.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1022 pF @ 15 V
ZXMP3A16N8TA
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