ZXMN3F31DN8TA

Diodes Incorporated

MOSFET 2N-CH 30V 5.7A 8SOIC

Diodes Incorporated ZXMN3F31DN8TA
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ZXMN3F31DN8TA specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C5.7A
Power - max1.8W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs24mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs12.9nC @ 10V
Input capacitance (Ciss) (Max) @ vds608pF @ 15V
ZXMN3F31DN8TA
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