ZXMN2B14FHTA

Diodes Incorporated

MOSFET N-CH 20V 3.5A SOT23-3

Diodes Incorporated ZXMN2B14FHTA
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ZXMN2B14FHTA specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C3.5A (Ta)
Power dissipation1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs55mOhm @ 3.5A, 4.5V
Gate charge (Qg) (Max) @ vgs11 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds872 pF @ 10 V
ZXMN2B14FHTA
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