ZXMN2B03E6TA

Diodes Incorporated

MOSFET N-CH 20V 4.3A SOT23-6

Diodes Incorporated ZXMN2B03E6TA
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ZXMN2B03E6TA specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C4.3A (Ta)
Power dissipation1.1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 4.3A, 4.5V
Gate charge (Qg) (Max) @ vgs14.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1160 pF @ 10 V
ZXMN2B03E6TA
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