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Diodes Incorporated ZXMHC3A01T8TA

ZXMHC3A01T8TA - Diodes Incorporated

MPNZXMHC3A01T8TA
End of Life

MOSFET 2N/2P-CH 30V 2.7A/2A SM8

$1.72Ref. price · indicative, final on quote
PackagingSOT-223-8
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

ZXMHC3A01T8TA specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C2.7A, 2A
Power - max1.3W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N and 2 P-Channel (Full Bridge)
CaseSOT-223-8
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs120mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs3.9nC @ 10V
Input capacitance (Ciss) (Max) @ vds190pF @ 25V, 204pF @ 15V