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Diodes Incorporated ZVN4306GVTA — Discrete Semiconductors

Diodes Incorporated ZVN4306GVTA

MPNZVN4306GVTA
Active

MOSFET N-CH 60V 2.1A SOT223

$1.5800Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

ZVN4306GVTA Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C2.1A (Ta)
Power dissipation3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id3V @ 1mA
Rds on (Max) @ id, vgs330mOhm @ 3A, 10V
Input capacitance (Ciss) (Max) @ vds350 pF @ 25 V