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Diodes Incorporated ZVN4206A — Discrete Semiconductors

Diodes Incorporated ZVN4206A

MPNZVN4206A
Active
$0.7600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ZVN4206A specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C600mA (Ta)
Power dissipation700mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA)
Vgs(th) (Max) @ id3V @ 1mA
Rds on (Max) @ id, vgs1Ohm @ 1.5A, 10V
Input capacitance (Ciss) (Max) @ vds100 pF @ 25 V