ZVN2110ASTZ
Diodes Incorporated
[IN STOCK] In Stock: 6 pcs
MOQ 1 · Cut Tape (CT); Tape & Box (TB) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 320mA (Ta) |
| Power dissipation | 700mW (Ta) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Cut Tape (CT); Tape & Box (TB) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | E-Line-3 |
| Vgs(th) (Max) @ id | 2.4V @ 1mA |
| Rds on (Max) @ id, vgs | 4Ohm @ 1A, 10V |
| Input capacitance (Ciss) (Max) @ vds | 75 pF @ 25 V |
ZVN2110ASTZ
[ALLOC] verified