MJD31CHQ-13

Diodes Incorporated

PWR HI VOLTAGE TRANSISTOR TO252

Diodes Incorporated MJD31CHQ-13
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

MJD31CHQ-13 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown100 V
Current - collector (Ic)3 A
Current - collector cutoff1µA
DC current gain (hFE) (Min) @ ic, vce120 @ 100mA, 3V
Power - max1.45 W
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vce saturation (Max) @ ib, ic400mV @ 500µA, 50mA
MJD31CHQ-13
[ALLOC] verified
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