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Diodes Incorporated ES1J-13-F — Discrete Semiconductors

Diodes Incorporated ES1J-13-F

MPNES1J-13-F
Active

DIODE GEN PURP 600V 1A SMA

$0.3800Ref. price · indicative, final on quote
PackagingDO-214AC, SMA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ES1J-13-F specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 1 A
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified1A
Operating temperature - junction-55°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-214AC, SMA
Capacitance @ vr,20pF @ 4V, 1MHz
Reverse recovery time35 ns