DMTH8012LK3Q-13

Diodes Incorporated

MOSFET N-CH 80V 50A TO252

Diodes Incorporated DMTH8012LK3Q-13
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[IN STOCK] In Stock: 6 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMTH8012LK3Q-13 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation2.6W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs16mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs46.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2051 pF @ 40 V
DMTH8012LK3Q-13
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