DMTH43M8LPSQ-13

Diodes Incorporated

MOSFET N-CH 40V 22A PWRDI5060

Diodes Incorporated DMTH43M8LPSQ-13
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMTH43M8LPSQ-13 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C22A (Ta), 100A (Tc)
Power dissipation2.7W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerTDFN
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs3.3mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs49 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3367 pF @ 20 V
DMTH43M8LPSQ-13
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