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Diodes Incorporated DMTH41M8SPSQ-13

Diodes Incorporated DMTH41M8SPSQ-13

MPNDMTH41M8SPSQ-13
End of Life

MOSFET N-CH 40V 100A PWRDI5060-8

$1.82Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMTH41M8SPSQ-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation3.03W
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.8mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs79.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6968 pF @ 20 V