DMTH32M5LPSQ-13

Diodes Incorporated

MOSFET N-CH 30V 170A PWRDI5060-8

Diodes Incorporated DMTH32M5LPSQ-13
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMTH32M5LPSQ-13 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C170A (Tc)
Power dissipation3.2W (Ta), 100W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerTDFN
Vgs(th) (Max) @ id3V @ 1mA
Rds on (Max) @ id, vgs2.2mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs68 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3944 pF @ 25 V
DMTH32M5LPSQ-13
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