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Diodes Incorporated DMTH10H025SK3-13

Diodes Incorporated DMTH10H025SK3-13

MPNDMTH10H025SK3-13
End of Life

MOSFET N-CH 100V 46.3A TO252 T&R

$0.64Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMTH10H025SK3-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C46.3A (Tc)
Power dissipation2W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs23mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs21.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1544 pF @ 50 V