DMT68M8LSS-13

Diodes Incorporated

MOSFET N-CHANNEL 60V 28.9A 8SO

Diodes Incorporated DMT68M8LSS-13
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMT68M8LSS-13 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C28.9A (Tc)
Power dissipation1.9W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs8.5mOhm @ 13.5A, 10V
Gate charge (Qg) (Max) @ vgs31.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2107 pF @ 30 V
DMT68M8LSS-13
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