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Diodes Incorporated DMT6016LPS-13

Diodes Incorporated DMT6016LPS-13

MPNDMT6016LPS-13
End of Life

MOSFET N-CH 60V 10.6A PWRDI5060

$0.57Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMT6016LPS-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C10.6A (Ta)
Power dissipation1.23W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs16mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds864 pF @ 30 V