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Diodes Incorporated DMT6015LSS-13

Diodes Incorporated DMT6015LSS-13

MPNDMT6015LSS-13
End of Life

MOSFET N-CH 60V 9.2A 8SO

$0.74Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMT6015LSS-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C9.2A (Ta)
Power dissipation1.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs16mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs18.9 nC @ 30 V
Input capacitance (Ciss) (Max) @ vds1103 pF @ 30 V