DMT6004LPS-13

Diodes Incorporated

MOSFET N-CH 60V 22A PWRDI5060

Diodes Incorporated DMT6004LPS-13
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMT6004LPS-13 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C22A (Ta), 90A (Tc)
Power dissipation2.1W (Ta), 105W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs2.8mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs96.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4515 pF @ 30 V
DMT6004LPS-13
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