DMT3004LPS-13

Diodes Incorporated

MOSFET N-CH 30V 21A PWRDI5060

Diodes Incorporated DMT3004LPS-13
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[IN STOCK] In Stock: 12 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMT3004LPS-13 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C21A (Ta), 140A (Tc)
Power dissipation2.7W (Ta), 113W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+20V, -16V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs3.8mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs43.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2370 pF @ 15 V
DMT3004LPS-13
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